| PART |
Description |
Maker |
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AS6C4008-55STIN AS6C4008-55PCN AS6C4008-55SIN AS6C |
512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Series 320 tactile switch with multiple color and cap options
FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8）低功耗启动块闪存系列
4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8）低功耗启动块闪存系列
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation
Intel Corp.
Rochester Electronics, LLC
Intel, Corp.
Sharp, Corp.
|
| EM681FV16A |
512K x 16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM610FV16CW-12LL EM610FV16CW-55LL EM610FV16CW-55S |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K6F4008U2G-F K6F4008U2G |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
SWITCH
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| LY62L51316 LY62L51316E LY62L51316GL LY62L51316GV L |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY6251216 |
512K X 16-Bit Low Power CMOS SRAM
|
Lyontek
|
